2N5781 datasheet

Manufacturer General Electric
Description Silicon P-N-P epitaxial-base transistor. -80V, 10W. - Pol=PNP / Pkg=TO39 / Vceo=80 / Ic=3.5 / Hfe=20-100 / fT(Hz)=8M / Pwr(W)=10
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ECAD Model
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